Cover of Dopants and Defects in Semiconductors

Dopants and Defects in Semiconductors

Matthew D. McCluskey, Eugene E. Haller
Publisher: CRC Press, Taylor & Francis Group
Published: 2018
ISBN-13: 9781138035195
ISBN-10: 113803519X
Pages: 350
Subjects: Science / Physics / General, Science / Physics / Condensed Matter, Technology & Engineering / Electrical, Technology & Engineering / Electronics / Semiconductors, Technology & Engineering / Chemical & Biochemical, Technology & Engineering / Materials Science / General, Technology & Engineering / Materials Science / Electronic Materials, Technology & Engineering / Microwaves, Technology & Engineering / Nanotechnology & MEMS
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About Dopants and Defects in Semiconductors

Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ¿ an easy reading, broad introductory overview of the field" ¿Materials Today "¿ well written, with clear, lucid explanations ¿" ¿Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received...

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