Electrical Engineering > Lab Report > University of Nevada, RenoEE 320LLab Report 7 BJT CE Amplifier & Switch (All)

University of Nevada, RenoEE 320LLab Report 7 BJT CE Amplifier & Switch

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Lab # 7 : BJT CE Amplifier & Switch October 28th, 2019 (of actual lab, not due date) Lesly Carrasco Cole LewisObjective: The objective of this lab is to build and test out BJT Common emitter ampl... ifier and test it to see its response as well as functionality. This will also allow us to utilize a 2N3904 BJT transistor in future circuits. . Equipment Used: We used a 2N3904 BJT transistor, Elvis, and Multisim. Theory: We will be focusing on BJT’s or Bipolar Junction Transistors. BJT transistors consist of three sections the Base, Collector and the Emitter. In a common-emitter transistor a signal is applied to the base and emitter terminals while the output is from the collector and emitter terminals. In this configuration it allows to you to get a large gain from this particular transistor. Partial Example: The total resistance in series (Fig. 1) is calculated by simply adding the resistances together: RT = R1 + R2 + … Rn Figure 1: Series Circuit Configuration When typing your theory, do not copy from another source without clearly stating a reference. Plagiarism will not be tolerated!Procedure: Using Multisim we had to build a circuit that would show a standard 4-resistor bias circuit. We put probes on to show the values for VBEQ, VCEQ, ICQ, IBQ, and IEQ [Show More]

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